| Mfg Part Number: 170208-01 | Alternate P/N: 17020801 |
| NSN : 5962-01-421-1336 | NIIN : 014211336 |
| CAGE Code : 61271 | Manufacturer: Fujitsu Microelectronics Inc |
| Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Thank you for choosing Civil Aviation Parts for part number 170208-01. You have reached our NSN RFQ Page, featuring our top-requested NSN 5962-01-421-1336 parts and components with Microcircuit Memory, manufactured by Fujitsu Microelectronics Inc. Some of these items include part number 170208-01, and various others, all of which have been vetted for quality assurance and authenticity. At Civil Aviation Parts, we prioritize our customers and their operations by only sourcing from top global manufacturers that we trust, assuaging the worry of not receiving quality items from us.
The 170208-01 part number featured under the NSN 5962-01-421-1336 and manufactured by Navair And Navsea Managed are paired alongside CAGE Code 61271 under FSC 5962 Microcircuits Electronic. Civil Aviation Parts utilizes CAGE Codes so that our customers can narrow down our ever-expanding listings by using our optimized search engine and filters. If you are familiar with the CAGE Codes associated with the particular NSN products you wish to purchase, we invite you to use them.
If you need more information regarding the 170208-01 NSN item you wish to purchase, please include everything in the provided RFQ form below. When you fill out a form, in return, you will be provided a competitive quote for your comparisons in as little as 15 minutes.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-421-1336 Item Description: Microcircuit Memory | 5962 | 014211336 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 170208-01 | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 495.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
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